This development is related to high-performance light-emitting devices based on thin flms and nanostructures of ZnSe and ZnS semiconductors in porous matrix of Al2O3. Miniature and subminiature radiation sources are of special interest for the creation of new high-performance light sources. Application promise of optical materials is mainly associated with highly effective electroluminescent materials based on nanoparticles of wide-gap semiconductors with unique properties. For creation of sources, thermal and magnetron evaporation approaches are applied along with the “soft chemistry” methods, featured with low power inputs and environmentally sound processes.
The light source has the following characteristics: brightness is not less than 5 lx; an exciting feld voltage is not greater than 50 V at a current of not greater than 50 mA; an exiting feld frequency is not greater than 2 kHz.
